Aluminum Nitride vs Silicon Carbide in Semiconductor Applications

In the semiconductor industry, 窒化アルミニウム（AlN） そして 炭化ケイ素（SiC） have long been widely used due to their unique properties. This article compares AlN and SiC based on their characteristics and applications in the semiconductor field, helping you select the most suitable material.

1.Thermal Conductivity

Semiconductor devices generate significant heat during operation, requiring high thermal conductivity materials (such as AlN, SiC, and Al₂O₃) to efficiently dissipate heat and prevent overheating, which can affect performance, stability, and lifespan.

Aluminum Nitride (AlN): AlN is known for its high thermal conductivity of 170–200 W/m·K, making it highly suitable for substrates, heat spreaders, and packaging components.
Silicon Carbide (SiC): SiC typically has a thermal conductivity of 120–200 W/m·K. Although slightly lower than AlN in some cases, it can maintain stability at higher operating temperatures, which is critical for power devices.

2. Electrical Properties

Electrical performance determines a device’s conduction efficiency, switching speed, power handling capability, and long-term reliability.

AlN: Acts as a strong electrical insulator with high resistivity, making it ideal for components requiring both thermal management and electrical isolation.
SiC: A wide-bandgap semiconductor (~3.2 eV), enabling high-voltage and high-frequency switching. SiC is widely used in power MOSFETs, diodes, and high-power electronic devices.

3. Mechanical Strength and Reliability

AlN: Has good mechanical strength and can be precisely processed into customized semiconductor components, but is more brittle than SiC.
SiC: Much harder and more robust, with excellent wear resistance, suitable for extreme environments and applications requiring high durability.